2N6040G
Manufacturer:
On Semiconductor
Mfr.Part #:
2N6040G
Datasheet:
Description:
BJTs TO-220-3 Through Hole PNP 75 W Collector Base Voltage (VCBO):60 V Collector Emitter Voltage (VCEO):60 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 10.53 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Height | 15.75 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 8 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 75 W |
| Power Dissipation | 75 W |
| Max Collector Current | 8 A |
| Collector Emitter Breakdown Voltage | 60 V |
| Continuous Collector Current | 8 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 60 V |
| Collector Base Voltage (VCBO) | 60 V |
| Collector Emitter Saturation Voltage | 2 V |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 1000 |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Max Cutoff Collector Current | 20 µA |
| Transistor Type | PNP |
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